| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming wiring in which the line width is finer than conventional, with a semi-additive method. SOLUTION: Over the whole surface of a board 11, a power supply film 12 composed of tungsten is formed, on which a photoresist pattern 13 is formed. The photoresist pattern 13 is used as a mask, and a plating base film 14 composed of Cu/Ti is formed on the whole surface of the board 11 through electron beam deposition. By applying current to the power supply film 12, electrolytic copper plating is performed, and a Cu plating film 15 is deposited on the plating base film 14. After that, the photoresist pattern 13 and the plating base film 14 on the pattern 13 are lifted off. Through reactive ion etching, the power supply film 12 in a region exposed from the plating film 15 is removed, and a desired wiring pattern 16 is obtained.
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