| 摘要 |
PROBLEM TO BE SOLVED: To simply avoid accumulating carriers, without causing the contamination, etc., of a substrate surface or an underlying layer surface by the thermal cleaning treatment using hydroxide gas of a specified element to remove Si or Si compound existing on the substrate surface or the underlying layer surface. SOLUTION: Si or Si compound existing on the substrate surface or the underlying layer surface is removed by the thermal cleaning treatment using As hydroxide gas as a cleaning gas. Si or Si compound existing on the substrate surface or the base film surface is removed as hydroxides by the reduction reaction with free hydrogen dissociated from the As hydroxide gas. Thus Si or Si compound can be removed, without complicating a semiconductor manufacturing apparatus structure and causing the surface morphology deterioration, resulting in that the carrier accumulation due to the action of Si as a donor can be avoided.
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