发明名称 NEGATIVE PHOTORESIST COMPOSITION USING POLYMER HAVING 1,2-DIOL STRUCTURE, AND PATTERN FORMING METHOD USING THE COMPOSITION
摘要 PROBLEM TO BE SOLVED: To obtain a compsn. having excellent transparency which can be used for lithography using a short wavelength light and which has both of the durability to dry etching and resolution by incorporating a specified polymer, a crosslinking agent of specified compd. and a photoacid producing agent which produces acid by exposure. SOLUTION: This compsn. contains a polymer containing a unit expressed by formula I, a crosslinking agent of compd. containing functional groups expressed by formula II, and a photoacid producing agent which produces acid by exposure. In the formula I, R1 is hydrogen atom or methyl group, G is an alicyclic group having a 1,2-diol structure. In the formula II, R10 is hydrogen atom, a 1-6C alkyl group or 3-5C oxoalkyl group. In 100 pts.wt. of the whole structure components of the compsn., the compsn. contains 50 to 98 pts.wt. of the polymer having the unit expressed by the formula I, 1 to 50 pts.wt. of the crosslinking agent, and 0.2 to 15 pts.wt. of the photoacid producing agent.
申请公布号 JP2000122288(A) 申请公布日期 2000.04.28
申请号 JP19980288214 申请日期 1998.10.09
申请人 NEC CORP 发明人 IWASA SHIGEYUKI;MAEDA KATSUMI;NAKANO KAICHIRO;HASEGAWA ETSUO
分类号 H01L21/027;G03F1/00;G03F1/68;G03F7/004;G03F7/027;G03F7/029;G03F7/038 主分类号 H01L21/027
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