发明名称 WAFER SUPPORT OF SEMICONDUCTOR MANUFACTURING SYSTEM
摘要 An epitaxial growth apparatus includes a processing chamber composed of fused silica, and a wafer support arranged in the processing chamber. Halogen lamps are arranged above and below the processing chamber to heat a semiconductor wafer supported on the wafer support. The wafer support includes a susceptor for holding the wafer and a susceptor support shaft for supporting the susceptor on the lower side. Arms are extended radially from the main shaft of the susceptor support shaft to support the susceptor at three points. Since no projection for support is present under the center of the susceptor, the heat from the lower halogen lamps is not interrupted and the semiconductor wafer can be heated uniformly.
申请公布号 WO0024044(A1) 申请公布日期 2000.04.27
申请号 WO1999JP05753 申请日期 1999.10.19
申请人 APPLIED MATERIALS, INC.;ARIMURA, KENICHI;ARIMA, SEIJI;TAKAGI, YOUJI 发明人 ARIMURA, KENICHI;ARIMA, SEIJI;TAKAGI, YOUJI
分类号 H01L21/205;C23C16/44;C23C16/455;C23C16/458;C23C16/48;C30B25/12;H01L21/00;H01L21/26;H01L21/687;(IPC1-7):H01L21/205 主分类号 H01L21/205
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