发明名称 MAGNETIC DEVICE, MAGNETIC MEMORY DEVICE, MAGNETIC REGISTER EFFECT HEAD AND MAGNETIC STORAGE SYSTEM
摘要 PURPOSE: A magnetic device is provided to have a large magnetic-resister variation rate in a less magnetic field, and to be no variation of a resister and a sensitivity for a magnetic field. CONSTITUTION: In a magnetic device, a ferromagnetic-dielectric mixture layer(3) has a ferromagnetic material and a dielectric material. A first and a second tunnel dielectric barriers(2,4) are formed on the ferromagnetic-dielectric mixture layer, respectively. A first layer(1) of a ferromagnetic material is formed so that the first dielectric barrier exists between the ferromagnetic-dielectric mixture layer and the first layer of the ferromagnetic material. A second layer(5) of a ferromagnetic material is formed on the second dielectric barrier so that a current between the first layer and the second layer flows through the first and second dielectric tunnel barriers and through the ferromagnetic-dielectric mixture layer. A volume of the ferromagnetic material in the ferromagnetic-dielectric mixture layer is larger than that of the dielectric material in the ferromagnetic-dielectric mixture layer.
申请公布号 KR20000023047(A) 申请公布日期 2000.04.25
申请号 KR19990038509 申请日期 1999.09.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 INOMATAGO ICHIRO;SAITO YOSHIAKI;NAKAMURA SHINICHI
分类号 G01R33/06;G11B5/00;G11B5/39;G11B5/66;G11C11/15;H01F10/32;H01L43/08;(IPC1-7):G11B5/39 主分类号 G01R33/06
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