| 摘要 |
PURPOSE: A semiconductor device having a via contact hole and manufacturing method of the device are provided to reduce a resistance of conductive film filled in the via contact hole by increasing the contact area between the conductive film and a metal film exposed by the via hole. CONSTITUTION: A semiconductor device comprises a substrate(40), a first metal pattern(42), capping layers(44,46) and an interlayer dielectric(50) sequentially deposited on the substrate, a via contact hole(54,56) having an upper region through the interlayer dielectric and the capping layers and a lower region to expose the inner region of the first metal pattern, barrier metal patterns(58a,60a) formed on the exposed surface, a conductive plug(64a) filled into the via contact hole, an adhesive layer(66) formed on the conductive plug and the barrier patterns, and a second metal layer(68) formed on the adhesive layer.
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