发明名称 |
Active matrix substrate and method of forming a contact hole in the same |
摘要 |
A method for forming a contact hole in an active matrix substrate, the method comprising steps of: (a) depositing an insulating film covering a first electrode provided on a substrate and the substrate; (b) forming a contact hole by patterning said insulating film by means of dry etching; and (c) forming a second electrode, and contacting the second electrode with the first electrode; wherein in the step (b) after forming a contact hole by dry etching, a surface treatment by plasma etching or reactive ion etching with oxygen gas under a condition in which a pressure P is in a range of 100 Pa to 400 Pa is performed.
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申请公布号 |
US6054392(A) |
申请公布日期 |
2000.04.25 |
申请号 |
US19970984064 |
申请日期 |
1997.12.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA;ADVANCED DISPLAY, INC. |
发明人 |
URA, MASASHI;TAKANABE, SHOICHI;NAKAMURA, NOBUHIRO;ENDOH, YUKIO;ITOH, OSAMU |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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