发明名称 Method for identifying desired features in a crystal
摘要 A method for identifying desired features in an off-orientation crystal uses radiation, such as x-rays, directed toward the crystal in a first direction to detect a unique region in a first direction. Based on identifying the unique region, the location of a desired feature, such as a key growth line, is approximated. Radiation is then directed at the crystal in a second direction transverse to the first direction to determine the precise location of the desired feature. The method can be performed automatically by a programmed x-ray device.
申请公布号 US6055293(A) 申请公布日期 2000.04.25
申请号 US19980108428 申请日期 1998.06.30
申请人 SEH AMERICA, INC. 发明人 SECREST, MARK EDWARD
分类号 G01N23/20;(IPC1-7):G01N23/20 主分类号 G01N23/20
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