发明名称 PLATINUM SOURCE COMPOSITIONS FOR CHEMICAL VAPOR DEPOSITION OF PLATINUM
摘要 PURPOSE: Platinum source compositions for chemical vapor deposition of platinum is provided, which is characterized in that Pt thin layer is deposited on the substrate faster than prior-methods by liquid phase transition method(Pt CVD process). CONSTITUTION: A platinum source reagent liquid solution, comprising: (i) at least one platinum source compound selected from the group consisting of compounds of the formulae: (A) RCpPt(IV)R'3 compounds, of the formula: wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and (B) Pt(beta-diketonates)2 of the formula: wherein: each R'' is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and (ii) a solvent medium therefor. The platinum source reagent liquid solutions are readily employed in a chemical vapor deposition process system including a liquid delivery apparatus for volatilizing the source reagent liquid solution and transporting the resulting vapor to the chemical vapor deposition reactor for deposition of platinum on a substrate mounted in the CVD reactor.
申请公布号 KR20000022525(A) 申请公布日期 2000.04.25
申请号 KR19987010970 申请日期 1998.12.24
申请人 ADVANCED TECHNOLOGY MATERIALS INC. 发明人 BAUM THOMAS H;KIRLIN PETER S;POMBRIK SOFIA
分类号 C07C49/12;C07C49/167;C07C49/92;C07F15/00;C07F17/02;C23C14/26;C23C16/18;G06F12/00;H01L21/02;H01L21/285;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):C07F15/00 主分类号 C07C49/12
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