| 摘要 |
PURPOSE: A semiconductor memory and a methode for manufacturing the same are provided to obtain an integrated DRAM by intercepting terminals of a memory cell and its neighbor circuits. CONSTITUTION: A semiconductor memory and a methode for manufacturing the same comprise a semiconductor substrate, an insulated layer(10,11), a bit line(7,20) and a capacitor lower electrode(6,25), a capacitor insulated layer, and a capacitor upper electrode(5,22). The semiconductor substrate forms transistors thereon. The insulated layer is formed on the semiconductor substrate. The bit line and the capacitor lower electrode are formed on the insulated layer. The capacitor insulated layer is formed on the capacitor lower electrode. The capacitor upper electrode is formed on the capacitor insulated layer.
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