发明名称 THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE
摘要 PURPOSE: A thin film transistor and liquid crystal display device are provided to improve the adhesion property between gale signal line and gate insulating layer made of silicon nitride formed on the gate line and to decrease fabricating cost. CONSTITUTION: A thin film transistor comprises: a gate signal line(3); a gate insulating layer (11) consisted of silicon nitride on the gate line; a source signal line(4) and/or drain output electrode(9), wherein the gate signal line(3) comprises a first layer(3c) formed at a part adjacent to the gate insulating layer and consisted of a titanium layer containing nitrogen and a second layer(3b) formed below the first layer and comprising aluminum(Al), thereby the adhesion property between gale signal line(3) and gate insulating layer(11) is improved and fabricating cost is decreased.
申请公布号 KR20000022736(A) 申请公布日期 2000.04.25
申请号 KR19990034250 申请日期 1999.08.19
申请人 SHARP CORPORATION 发明人 SHIMATA YOSHINORI;KAWAGUCHI MASAO;ISHIBASHI HIROSHI;NAKATA YUKINOBU;AKAMATSU GEIICHI
分类号 H01L29/786;G02F1/1333;G02F1/1343;G02F1/136;G02F1/1362;G02F1/1368;H01L29/45;H01L29/49;(IPC1-7):H01L29/786 主分类号 H01L29/786
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