SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device and fabricating method thereof is provided to fabricate a highly dense and highly integrated device by preventing damage of a gate oxide. CONSTITUTION: A substrate(101) on which a predetermined device is formed is provided. An insulating layer(109) is formed to cover the device. A contact hole(111) is opened in the insulating layer(109) to expose surface of the substrate(101). A contact block(113) is formed in the contact hole for electrical contact with the substrate. A first metal layer(110) having high adhesiveness to the insulating layer is formed on the insulating layer. A second metal layer(112) is formed on the surface of the substrate(101) by plasma CVD method.