| 摘要 |
PURPOSE: A semiconductor device is provided to reduce a leakage of electric current, realize a high performance and integration by improving the characteristics of links. CONSTITUTION: A main surface of a p-type Si substrate(31) has a groove, and an embedded oxide layer(34) is formed to have a device isolation region of an STI structure. A nitration silicon region(40) is introduced to be functioned as a barrier material with respect to an outward direction diffusion of boron(B) between the embedded oxide layer(34) and the Si substrate(31). The nitration silicon region(40) is mounted in response to a channel region of parastic MOSFET, and is formed to a deeper region than a substrate depth which determines an MOSFET critical voltage.
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