| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A semiconductor device having a structure including no LDD region while being structured in such a manner that fixed charges are charged in portions of a gate oxide film overlapping with side walls of a gate electrode formed on the gate oxide film so as to reduce the intensity of electric field between the source and drain of a transistor included in the semiconductor device. The charged-up positive or negative fixed charges serve to invert the conductivity of the channel region portion of a semiconductor substrate on which the gate oxide film is formed, thereby providing the same effect as the LDD region. The invention also provides a method for fabricating the semiconductor device.
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| 申请公布号 |
US6054357(A) |
申请公布日期 |
2000.04.25 |
| 申请号 |
US19970948259 |
申请日期 |
1997.10.09 |
| 申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
CHOI, DEUK SUNG |
| 分类号 |
H01L21/334;H01L21/265;H01L21/336;H01L21/8238;H01L27/092;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L21/425 |
主分类号 |
H01L21/334 |
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