| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to fabricate an isolation oxide having a high shape accuracy and an isolation oxide having a high strength with a simple process, and a semiconductor device comprises isolation oxides having different film thicknesses and comprises a device having a stable characteristics around each isolation oxide at the same time. CONSTITUTION: A semiconductor device is fabricated which comprises a plurality isolation oxide films(40,42) having different film thicknesses. A nitride film(14) and a resist film(30) are formed on a silicon substrate(10). Opening apertures(32,34) are installed on the resist. An opening hole is formed on the nitride film using the resist film as a mask. The isolation oxide films are formed on the bottom of the opening hole by thermal oxidation. The dimension LW of a large opening hole(36) installed on the nitride film is established as over 0.6 micrometer and the dimension LN of a small opening hole(38) is established as below 0.6 micrometer.
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