发明名称 |
STRUCTURE HAVING AN ELECTROSTATIC DISCHARGE CIRCUIT OF A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME |
摘要 |
PURPOSE: An electrostatic discharge(EDS) circuit of a semiconductor device is provided to minimize damage to a junction diode connected to a pad. CONSTITUTION: An electrostatic discharge(EDS) circuit of a high voltage semiconductor device including a ground pad, a power pad, a plurality of electrical signal pads and an internal circuit comprises: at least one metal oxide semiconductor(MOS) transistor of which a source region and a drain region are connected to the electrical signal pad; and a Zener diode connected to the source region of the MOS transistor.
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申请公布号 |
KR20000021403(A) |
申请公布日期 |
2000.04.25 |
申请号 |
KR19980040473 |
申请日期 |
1998.09.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, TAE BOK |
分类号 |
H01L27/06;H01L27/02;(IPC1-7):H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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