发明名称 STRUCTURE HAVING AN ELECTROSTATIC DISCHARGE CIRCUIT OF A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: An electrostatic discharge(EDS) circuit of a semiconductor device is provided to minimize damage to a junction diode connected to a pad. CONSTITUTION: An electrostatic discharge(EDS) circuit of a high voltage semiconductor device including a ground pad, a power pad, a plurality of electrical signal pads and an internal circuit comprises: at least one metal oxide semiconductor(MOS) transistor of which a source region and a drain region are connected to the electrical signal pad; and a Zener diode connected to the source region of the MOS transistor.
申请公布号 KR20000021403(A) 申请公布日期 2000.04.25
申请号 KR19980040473 申请日期 1998.09.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, TAE BOK
分类号 H01L27/06;H01L27/02;(IPC1-7):H01L27/06 主分类号 H01L27/06
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