| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to reduce the contact resistance and also reduce a wiring pitch by increasing contact areas and by forming a connection hole which is made to be larger than the thickness of a wiring layer so as to pass through the wiring layer. SOLUTION: A first wiring layer 301 is formed by depositing alloys containing the main composite of Al and around 5% Cu to make the thickness of 0.8μm with the use of spattering method, and then a wiring with the width of 0.5μm is formed by etching. Next, a connection hole 303 having the size of 0.3μm is formed with the use of a photo mask on the basis of the first wiring layer 301. A second wring layer 304 is formed by depositing Ti/TIN to make the thickness of 300Å, 1000Åwith the use of continuous spattering method, and a wiring having the same width of 0.5μm as that of the first wiring layer 301 is formed. As a result, the connection hole 303 is contacted with all the side walls of the first wiring layer 301, and the contact area is calculated as the following equation: (0.3μm×4 side walls×thickness of 0.8μm of the first wiring layer)=9.6×m2. Therefore, the contact area is as around 100 times as the conventional area, and the contact resistance (0.05Ω) is 1/100 of the conventional resistance, which indicate large reduction of contact resistance. |
