| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-versatility semiconductor device, which is suitable for the communication bipolar IC by which a current amplification factor with can be obtained constant linearity, even if collector current is increased, and to provide a method for manufacturing the device. SOLUTION: A semiconductor device comprises a vertical NPN transistor 201 on a support substrate 1 via separating wall regions 31-34 of specified width on one side and a horizontal PNP transistor 301 on the other side. In this case, a silicon oxide film 2 to be buried is layered between the support substrate 1 and each of the transistors 201 and 301. P+ layers 111 and 112 of the horizontal PNP transistor 301 and placed near the silicon oxide film 2.
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