| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching device exhaust electrode which makes uniform formation of plasma on a wafer and reduces a volume occupied by a process chamber, and the process chamber of a semiconductor device manufacturing dry etching device. SOLUTION: In a dry etching device exhaust electrode 11, a plurality of exhaust ports 14 are formed symmetrically on the sidewall of an electrode housing 13 for supporting an electrode plate 12 on which a wafer is mounted, and the exhaust port 14 is coupled to a pipe connection port 15. Accordingly, since plasma formed in an upper part of the electrode plate 12 of the exhaust electrode 11 is made uniform, effects which enable constant etching are obtained, and also since the function of an exhaust pipe 4 is integrated with a function of an electrode, thereby functioning by the one exhaust electrode 11, a volume occupied by a process chamber is reduced and efficiency of a purity chamber is enhanced.
|
