| 摘要 |
PROBLEM TO BE SOLVED: To provide a III-group nitride laser diode made of epitaxial film with good crystal on an silicon substrate and having a small initiation current in laser oscillation and a good yield, and provide its manufacturing method. SOLUTION: III-group nitride semiconductors 2 to 7 made of AlxGayIn1-x-y N, where 0<=x, 0<=y, and x+y<=1, are laminated on an silicon substrate 1. A current constriction layer N1 with parallel cleavage planes as a laser resonance face for forming a striped current path in parallel with a normal line of the laser resonance face is included in an LD. In this case the current constriction layer N1 is an insulating film between the silicon substrate 1 and the III- group nitride film or between the III-group nitride films, and the insulating film functions also as an ELO mask.
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