| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor integrated device provided with a circuit configuration with which electrical charge accumulated in a large-size floating island can be fully drawn out. SOLUTION: P-channel MOS transistors T3 are formed on the surface of a floating island 2. A polysilicon G1 of gate structure is formed around the P-channel MOS transistors T3. An n+ diffused region 3 formed around the P-channel MOS transistors T3 is isolated by the gate structure. Electrical charges accumulated in the floating island 2 are pulled out from the n+ diffused region 3.
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