发明名称 METHOD FOR REMOVING PROTECTIVE FILM OF SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To efficiently remove a protective film which is superior in workability, and is also superior in resources protection, and is formed in an unwanted part from a semiconductor substrate. SOLUTION: When a protective film formed in an edge part of a semiconductor substrate 3 is released, a spacer 1 is formed into a shape in that only the protective film at a specified position on a surface of the semiconductor substrate can be coated, and the spacer 1 is pinched mutually and superimposed between the semiconductor substrate for releasing the protection film formed in the edge part. When, at least the superimposed spacers 1 and semiconductor substrates 3, each comprising a plurality of sheets are pinched between fixing means 5, they are dipped in a protection liquid releasing liquid while retrained in fixed condition, and only the protective film part to be removed is exposed and dipped in the removing liquid. Thus, it is possible to efficiently remove and remove an unwanted part of the protective film.
申请公布号 JP2000114231(A) 申请公布日期 2000.04.21
申请号 JP19980285400 申请日期 1998.10.07
申请人 MEMC KK 发明人 YAMAGUCHI AKIRA
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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