| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which can excellently work under a low voltage by improving the working speed of a nonvolatile memory. SOLUTION: A semiconductor device is provided with a first gate insulating film 12 formed on a semiconductor substrate 10, a floating gate 13 formed on the film 12, a second gate insulating film 14 formed on the gate 13, and a control gate 15 formed on the floating gate 13. The floating gate 13 is formed in such a curve shape that only one end side of the gate 13 is protruded upward and the difference in film thickness between the protruded portion and non- protruded portion of the gate 13 is made larger than the difference in film thickness between both portions in the gate insulating film 12.
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