| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can easily obtain superior characteristics by preventing the threshold deterioration caused by the short channel effect by preventing the concentration variation of an impurity near the joint surface of a p-n junction and a method for manufacturing the device. SOLUTION: First, n-type source-drain areas 3 are formed by selectively introducing an n-type impurity to the surface of a semiconductor substrate 1, into which boron has beam introduced, at a concentration higher than that of boron. Then boron-introduced areas 2 which become low-concentration n-type areas are formed by selectively implanting boron ions into the source-drain areas 3. Consequently, such a p-type concentration distribution that the concentration of a p-type impurity becomes higher as going toward the boron-introduced areas 2 from the element area of the substrate 1 is formed.
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