MANUFACTURE OF OPTOELECTRONIC DEVICE AND MANUFACTURE OF THE SAME

摘要

PROBLEM TO BE SOLVED: To form an optoelectronic device and its driving board by forming a dual gate-type thin-film transistor partly comprising a peripheral driving circuit on the driving board. SOLUTION: First, a sputter film 71 is formed on an insulation substrate 1. An Mo-Ta film 71 is etched by using a photoresist 70 as a mask to form an inclined gate electrode 71, and a gate insulation film 72 on which an SiN film 72 and an SiO2 film 73 are piled up is formed on the insulation substrate 1, forming a plurality of steps 4 in an appropriate shape and dimension. Then, a CMOS circuit comprising of a top gate-type nMOSLDD-TFT and a dual gate-type p- and n-MOSTFTs is assembled in the indication part and peripheral driving circuit part using a single crystal silicon layer 7 which is formed by using the steps 4 as seed so that an integral type active matrix board 30 which is provided with both the indication part and peripheral driving circuit part is formed. Therefore, an electrooptic device such as a thin-film semiconductor device for indication incorporated with a high-performance driver can be manufactured.