| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory whose erasure efficiency is not lowered and which can restrain a current which flows when a source line is charged. SOLUTION: A floating gate and a control gate are provided at this nonvolatile memory. In the nonvolatile memory, a high voltage is applied to a source, and data inside a memory is erased, A first power supply P2 which is installed so as to charge a source line SL connected to sources of nonvolatile memories MC1 to MC4 and whose current supply capability is low is constituted. In addition, a second power supply P1 whose current supply capability is higher than that of the first power supply P2 is constituted. In addition, a control means DLY which controls the operation of the first power supply P2 and the operation of the second power supply P1 is constituted.
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