| 摘要 |
PROBLEM TO BE SOLVED: To freely change the characteristics of a semiconductor device by constituting a device, in such a way that the device is provided with a source region, a drain region, a gate electrode, and an internal resistance control means and the internal resistance of the device can be changed by means of the internal resistance control means, so that the device operates as an electrostatic induction transistor, when the internal resistance becomes minimum. SOLUTION: An individual semiconductor device is provided with an n--type layer 2, arranged on an n+-type Si substrate 1 and an n+-type layer 3 formed on the n--type layer 2. U-shaped grooves are arranged so as to surround the n- and n+type layers 2 and 3 and filled with a first insulating film 5. A gate electrode 8 is arranged on the first insulating film 5. A first control electrode 21 is arranged on the gate electrode 8, and a second control electrode 22 is arranged on the first control electrode 21. An internal resistance control means 9 is constituted of a second insulating film 11, the first control electrode 21, a third insulating film 12, and the second control electrode 22. When no bias voltage is impressed, the internal resistance of the individual semiconductor device is small, and the device works as an SIT. Therefore, the transistor characteristics of the semiconductor device can be controlled freely.
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