MANUFACTURE OF POLYCRYSTALLINE SILICON

摘要

PROBLEM TO BE SOLVED: To obtain a sufficiently large fluence margin of a laser beam used in laser annealing to crystallize amorphous silicon, to attain high electric field mobility and to ensure a high yield. SOLUTION: A thin film transistor applied for switching of a pixel of a liquid crystal display has a polycrystalline silicon layer which is formed by crystallization with laser annealing of amorphous silicon deposited on a glass substrate 1. A characteristic curve of intensity distribution of a laser beam used in the laser annealing has a maximum shifted to the upstream side of a moving direction of the glass substrate 1. The amorphous silicon is irradiated with the laser beam from the high intensity part in the laser annealing of the amorphous silicon.