| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element with high power generating efficiency and long life by improving on purpose carrier density in an oxide semiconductor constituting an n-type semiconductor electrode. SOLUTION: A photoelectric conversion element comprises a transparent conductor layer 2, an n-type semiconductor electrode 4 formed on the transparent conductor layer 2, pigment adsorbed on the n-type semiconductor electrode 4, an electron transfer layer 3 making contact with the pigment, and a counter electrode 5 making contact with the electron transfer layer 3. Further, the n-type semiconductor electrode 4 comprises an oxide containing Ti, and the carrier density in the n-type semiconductor electrode 4 is made 1017/cm3 or higher. |
