发明名称 SUBSTRATE TREATING METHOD AND SUBSTRATE CARRYING EQUIPMENT
摘要 <p>PROBLEM TO BE SOLVED: To reduce temperature distribution on a wafer surface which is generated when a wafer is taken out from a bake furnace after a heat treatment, by equipping a carriage pick with a temperature control body in which a plurality of protruding parts making the same plane are arranged on the surface, and a substrate pressing mechanism which presses the substrate in the direction of the temperature control body and fixed the substrate on the protruding parts. SOLUTION: Protruding parts 24a of a carriage pick 21 are so arranged that contact parts come into contact uniformly with the rear of a wafer 1. Thereby parts which are sucked by a negative pressure are also uniformly distributed in the same manner, so that when the wafer 1 has deformation, it can be precisely calibrated in a carriage pick 21 surface form. Uniform contact between the rear of the wafer 1 and the carriage pick 21 surface can be obtained, so that the contact thermal resistance between both surfaces can be obtained with excellent reproducibility and uniformly in the wafer 1 surface. The amount of heat transferred from the wafer to the carriage pick through the protruding parts becomes uniform in the wafer surface, and temperature adjustment of the wafer is enabled while maintaining the temperature distribution uniformity of the wafer.</p>
申请公布号 JP2000114343(A) 申请公布日期 2000.04.21
申请号 JP19980286288 申请日期 1998.10.08
申请人 HITACHI LTD 发明人 SUGAYA MASAKAZU;KANETOMO MASABUMI;YAMAMOTO TATSUHARU;MURAI FUMIO;SATO KAZUHIKO;MORI SHIGEKI;NISHIHARA HIROYUKI
分类号 H01L21/677;B25J15/06;B65G49/07;G05D23/00;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 H01L21/677
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