| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacture for a semiconductor device, capable of accurately patterning a film to be etched according into a desired shape. SOLUTION: This method includes a step of forming a pattern 100 having an angleαin a film to be etched, a step of manufacturing a first photomask formed with a mask pattern 101 having a sideβ', and a second photomask formed with a mask pattern 102 having a sideγ' so as to form an angleα', in response to an angleαby intersecting between the sideβ' and the sideγ' when both the photomasks are overlaid each other, a step of patterning a silicon oxide film formed on the film to be etched by the use of the first photomask, a step of patterning the silicon oxide film by the use of the second photomask; and a step of etching the film to be etched by the use of the oxide film patterned as a mask.
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