SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device including a dielectric element which has an element structure of high aspect ratio resulting from large-scale integration and an excellent step coverage and a method for manufacturing the same are disclosed. A lower electrode (46) and an upper electrode (48) both made of homogeneous Ru thin film and having 100 % step coverage are formed on both sides of an electric body (47) on underlying substrates (44, 45) having a roughness of an aspect ratio of 3, thereby manufacturing a large-scale integrated dielectric element in the temperature range from 180 DEG to 250 DEG C by an MOCVD method using cyclopentadienyl complex.