发明名称 p-TYPE ZnO SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME
摘要 A p-type ZnO single crystal having a low resistance; and a method for producing the p-type ZnO single crystal, which comprises providing a substrate (2) in a vacuum chamber (1) and supplying, to the substrate (2), gaseous atoms of Zn, O, N (p-type dopant) and Ga (n-type dopant) in a manner wherein the feeds of N and Ga are controlled so that the ratio of N:Ga in a crystal is 2:1, to thereby grow a p-type ZnO single crystal containing N and Ga.
申请公布号 WO0022202(A1) 申请公布日期 2000.04.20
申请号 WO1999JP05581 申请日期 1999.10.08
申请人 YOSHIDA, HIROSHI;YAMAMOTO, TETSUYA 发明人 YOSHIDA, HIROSHI;YAMAMOTO, TETSUYA
分类号 C30B23/02;H01L21/363;H01L29/22;H01L31/0296;H01L33/28;H01S5/327 主分类号 C30B23/02
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