发明名称 |
p-TYPE ZnO SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME |
摘要 |
A p-type ZnO single crystal having a low resistance; and a method for producing the p-type ZnO single crystal, which comprises providing a substrate (2) in a vacuum chamber (1) and supplying, to the substrate (2), gaseous atoms of Zn, O, N (p-type dopant) and Ga (n-type dopant) in a manner wherein the feeds of N and Ga are controlled so that the ratio of N:Ga in a crystal is 2:1, to thereby grow a p-type ZnO single crystal containing N and Ga. |
申请公布号 |
WO0022202(A1) |
申请公布日期 |
2000.04.20 |
申请号 |
WO1999JP05581 |
申请日期 |
1999.10.08 |
申请人 |
YOSHIDA, HIROSHI;YAMAMOTO, TETSUYA |
发明人 |
YOSHIDA, HIROSHI;YAMAMOTO, TETSUYA |
分类号 |
C30B23/02;H01L21/363;H01L29/22;H01L31/0296;H01L33/28;H01S5/327 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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