发明名称 |
Semiconductor device |
摘要 |
A semiconductor device composed of analog circuits operated by multiple power supplies is provided with a structure which enables to reduce cross talk sufficiently. In the present semiconductor device, first and second transistors formed on the p-type silicon substrate are surrounded by third and fourth high concentration n-type buried layers extending beyond two trenches provided so as to separately surround the first and second transistors. An n-type layer is formed on these high concentration n-type layers, and first and second electrodes are formed on the n-type layer. Electric potentials of the third and fourth high concentration n-type layers are stabilized at a fixed value by the supply of power through the electrodes mounted on the these layers in order to prevent cross talk.
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申请公布号 |
US6051868(A) |
申请公布日期 |
2000.04.18 |
申请号 |
US19980033306 |
申请日期 |
1998.03.02 |
申请人 |
NEC CORPORATION |
发明人 |
WATANABE, TAKESHI;SAWAIRI, AKIHIRO |
分类号 |
H01L21/761;H01L21/762;H01L21/822;H01L21/8222;H01L27/04;H01L27/06;H01L27/12;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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