CMP ABRASIVE AND POLISHING OF SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To obtain a CMP(chemical mechanical polishing) abrasive being readily subjected to waste liquor treatment, capable of polishing a face to be polished such as a silicon oxide film at a high speed without a scratch, having the ratio of the polishing rate of the silicon oxide film to the polishing rate of a silicon nitride film of >=10, and a method for polishing a substrate using the CMP abrasive. SOLUTION: This CMP abrasive comprises a cerium oxide particle, a dispersant, an additive having >80 to 100% biodegradation degree after 28 days measured by JIS K 6,950 and water. The method for polishing a substrate comprises pressing the substrate having formed a film to be polished against a polishing cloth of a polishing fixed plate, pressurizing the polishing cloth and relatively moving the substrate from the polishing fixed plate and polishing the film to be polished while supplying the CMP abrasive between the film to be polished and the polishing cloth.