| 摘要 |
PURPOSE: A method for fabricating a thin film transistor is provided to prevent a current leakage by removing an exposed portion where source and drain electrodes are not overlapped, and to improve a yield by etching an erroneous pattern portion of the source and drain electrodes owing to a continuous etching. CONSTITUTION: After forming a gate electrode(33) on a substrate, a gate insulating layer, an ohmic contact layer(39) and a first conductive layer(41) are sequentially formed on the substrate and are patterned such that a portion corresponding to the gate electrode remains. A second conductive layer(43) is formed on the substrate so as to cover the first conductive layer. The second conductive layer, the first conductive layer and the ohmic contact layer are patterned to expose a portion corresponding to the gate electrode of an active layer and to expose the active layer(37) and a transparent substrate(31) at one side of the gate electrode, so that source and drain electrodes and a pixel electrode are formed. A protection film(47) is formed at a portion corresponding to the gate electrode, and an exposed portion at one side of the gate electrode is etched using the protection film as a mask.
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