| 摘要 |
PURPOSE: A method of fabricating a capacitor is provided to remove the necessity to form fine patterns and simplify fabricating processes to save costs and enhance productivity by easily removing PSG through a wet-etching process using photoresist patterns as masks. CONSTITUTION: A BPSG(2) is deposited on a substrate(1) and a contact hole is formed in the BPSG(2) to expose a portion of a semiconductor device formed on the substrate(1). Then, a polysilicon(3) is deposited on inner wall of the contact hole and on the BPSG(2), and a PSG(4) is deposited on the polysilicon(3). Next, the polysilicon(3) and PSG(4) except the polysilicon(3) and PSG(4) deposited on the contact hole and its neighbor are removed by an etching process, and then a polysilicon(5) is deposited on sides of the PSG(4). Next, a photoresist is coated on the BPSG(2) on sides of the polysilicon(5) and then is removed by a wet-etching process.
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