METHOD OF MANUFACTURING SELF ALIGNED CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a self-aligned contact of a semiconductor device is provided to optimize a design so that a contact hole can be formed in a desirable position by a spacer process only without using a contact hole mask when forming a line and space pattern. CONSTITUTION: A method of manufacturing a self-aligned contact of a semiconductor device comprises the steps of: forming a line and space pattern while forming a mask for making a contact hole by a spacer process used in the succeeding process; evaporating a conductive thin film on a semiconductor substrate; evaporating a first insulation layer on the conductive thin film; etching the first insulation layer and the conductive thin film in the lower part by using the line and space pattern; evaporating a second insulation layer on the entire surface to the depth in which a gap-fill is realized in the position of the contact hole and not in positions other than the contact hole; and forming the contact hole by making a spacer in the position of the contact hole by etching the entire surface.