METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to obtain the maximum capacitance by minimizing loss depending on etching of a polysilicon layer and to simplify the process. CONSTITUTION: A method for manufacturing semiconductor devices forms the first insulating layer(21) on a semiconductor substrate in which a gate electrode and an impurity region are formed. The first polysilicon layer(23) and the second insulating layer(25) are stacked on the first insulating layer(21) so that they can be connected to the impurity region of the substrate via a contact hole. The second insulating layer(25) is formed and is then patterned. The second polysilicon layer is formed on the entire surface of the substrate including the patterned second insulating film(25). The second polysilicon layer is etched back to form a sidewall(27a) at both sides of the second insulating layer(25). The first polysilicon layer(23) is etched to form a capacitor storage electrode of a pillar shape. A dielectric layer and a capacitor plate electrode are formed on the capacitor storage electrode.