| 摘要 |
PURPOSE: A method for manufacturing semiconductor device is provided to prevent the increase of junction leakage current by reducing the damage of an active region and prevent the deactivation of a source/drain region by forming the source/drain region after a boarderless dielectrics is formed. CONSTITUTION: A method for manufacturing semiconductor device comprises a step of forming a gate(37) via a gate oxide film on a semiconductor substrate, a step of forming a first impurity regions, a step of forming an insulation film(33) covering the gate and then a mask pattern on the insulation film, a step of forming side walls on the side of the gate and a protection film on a field area, a step of forming a second impurity region, and a step of forming first and second contact holes.
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