| 摘要 |
PURPOSE: A method for forming IMD if semiconductor device is provided to reduce waste of a semiconductor substrates due to coating failure. CONSTITUTION: A method for forming IMD of semiconductor device comprises a step of forming a metal layer pattern(62) on a substrate, a step of forming a first layer insulation film(64) covering the pattern, a step of forming a second layer insulation film(66) on the first film, a step of repeatedly forming a third layer insulation film(68) till the resultant surface is flat, and a step of forming a second metal layer pattern. The second layer insulation film is formed on the first film, the third film is formed on the second film, and the second pattern is formed on the third film.
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