METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor device is provided to minimize the formation of the oxide film in heat treatment of a polysilicon film, thereby previously preventing the generation of the failure and enhancing reliability and productivity. CONSTITUTION: A method for manufacturing semiconductor device comprises a step forming a polysilicon film as a gate of a transistor on a semiconductor substrate, and a heat treatment step. In the heat treatment step, the chamber containing the semiconductor substrate is heated by the temperature to perform heat treatment the polysilicon film in-situ, and at the same time remnant gas within the chamber is removed.