| 摘要 |
PURPOSE: An etching apparatus is disclosed which makes distribution density of processing gas uniform to improve uniformity and selection ratio of film quality by forming different diameter of gas injector which injects the processing gas. CONSTITUTION: An etching apparatus comprises (a) chuck which is arranged inside of a processing chamber wherein wafer is processed and includes a lower electrode plate, (b) a gas supplying part(36) which supplies processing gas into the processing chamber, (c) an upper electrode plate(38) which is arranged inside of the processing chamber and is connected to the gas supplying part, the upper electrode having many gas injecting ports of different diameter to inject the processing gas towards the wafer, (d) an RF generator(41) which is connected to the upper electrode plate and the lower electrode plate to supply RF power to form processing gas in plasma state, and (e) a gas exhausting part(42) arranged in the processing chamber to exhaust the processing gas remaining inside of the processing chamber. Thus, since distribution density of plasma on the wafer is uniform, uniformity of etching is improved, and thus selection ratio of film quality is also improved.
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