METHOD FOR FABRICATING A CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of semiconductor device is provided to be able to increase the electrostatic capacitance of the capacitor by increasing the charging area of the capacitor. CONSTITUTION: The method includes the steps of forming insulating layers(12,12') on an integrated circuit substrate(10), and forming a conductive layer on the insulating layers opposite the integrated circuit substrate(10). A patterned ozone TEOS(tetraethylorthosilicate) undoped silicate layer is formed on the conductive layer, and conductive spacers(16a) are formed along sidewalls of the ozone TEOS undoped silicate layer. A dielectric layer is formed on the conductive spacers and on the first conductive layer, and a second conductive layer is formed on the dielectric layer opposite the first conductive layer and the conductive spacers.