发明名称 DRY ETCHING APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICES
摘要 PURPOSE: A dry etch apparatus is provided to improve the uniformity of etching by forming an additional hole in an end of an etch gas supply line and to reduce the manufacturing cost by extending a replacement period of a corn head. CONSTITUTION: A dry etch apparatus includes a process chamber(30). An etch gas supply line(34) has an additional hole(36) for supplying an etch gas to the central portion of the process chamber(30) at an end nozzle portion except for the circumferential portion of a process chamber. A corn head(38) is attached to the process chamber(30) separated by a given distance from the etch gas supply line and uniformly sprays the etch gas within the process chamber(30). A semiconductor wafer for which the etching process will be performed is located on a chuck(42). A vacuum line(32) is installed at a circumferential portion of the process chamber(30) to form a vacuum within the process chamber(30).
申请公布号 KR100253088(B1) 申请公布日期 2000.04.15
申请号 KR19970052393 申请日期 1997.10.13
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 HYUN, CHONG SUN;PARK, YONG WOO;KIM, GUN HO
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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