METHOD FOR FORMING CONDUCTION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a conductive layer is provided to improve an electrical characteristic and the yield by preventing a bridge phenomenon to remove etch remnants of the conductive layer. CONSTITUTION: A method for forming a conductive layer forms the first polysilicon film(2) pattern for a gate electrode and a spacer oxide film(3) on a semiconductor(1). The first interlayer insulating film(4) is formed on the entire structure. The second polysilicon film(5) pattern is formed on the first interlayer insulating film(4). The second interlayer insulating film is formed to be thicker twice than a normal thickness. The second interlayer insulating film(6") is experienced by a blanket etch process by a given thickness to form the second interlayer insulating film having an undulating inclination. After depositing the third polysilicon on the second interlayer insulating film(6"), the third polysilicon is etched by a mask and etch process to form the third polysilicon pattern.