METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor device is provided to minimize the diffusion of a channel stopper by removing the heat treatment process to the stopper and enhance refresh feature by minimizing the leakage current. CONSTITUTION: A method for manufacturing semiconductor device comprises a step dividing a semiconductor substrate(100) into an active area(102) and an element separating area(104), a step forming a channel area(108) for a transistor, a step sequentially stacking a gate insulation layer(110), a conductive layer and a first insulation layer, a step forming a gate electrode(112), and a step forming a source/drain area(118).