| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to increase the effective area of the capacitor in a highly integrated semiconductor device to increase the capacitance. CONSTITUTION: A first insulating layer(21) is formed on a semiconductor substrate(20). Then, a first polysilicon layer(22) is formed on the substrate(20) and the first insulating layer(21). Next, a second insulating layer(23) is formed, and ions are implanted into the second insulating layer to form an ion-implanted layer. Then, the second insulating layer is patterned and the second insulating layer is etched to form a second polysilicon layer on the second insulating layer. Next, the second insulating layer and the ion-implanted layer are removed, and a dielectric layer and a third polysilicon layer are formed on the first and second polysilicon layers.
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