OXIDATION FILM STANDARD SAMPLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: An oxide film thickness standard sample and a method for manufacturing the same are provided to be capable of easily managing the thickness of an oxide film formed in thickness of 1 - 5.3 micrometers. CONSTITUTION: A method for manufacturing the same forms an oxide film(12) of 1 - 5.3 micrometers in thickness on a silicon substrate(10) having the diameter of 20mm. A plasma process is performed for the oxide film(12) to form a plasma enhanced oxide film or an O3-TEOS(Tetra-EthylOrthosilicate) oxide film, etc. The uniformity of the oxide film(12) is kept to be within 0.3% of the thickness of the oxide film(12).