STRUCTURE AND METHOD OF TRENCH ISOLATION HAVING NITRIDE LINER OF THIN FILM PROTECTED WITH SPACER

摘要

PURPOSE: A method for isolating a trench having nitride liner of thin film protected with spacer is provided to prevent the generation of a dent on an interface(D) between an active region of a semiconductor substrate and a field region where an isolation is formed. CONSTITUTION: A silicon nitride liner(135a) is prevented to be over-etched in a post etching process by forming an insulation spacer on the silicon nitride liner on a trench side wall(127) adopted to prevent the defect generated in a trench isolation. The nitride liner is separated from a silicon nitride pattern which is used as an etching mask and is stacked on top of a semiconductor substrate(110) of an active region by transforming the nitride liner for suppressing the generation of stress on the semiconductor substrate into a spacer form.